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FDT439N
June 1999
FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 V RDS(on) = 0.058 @ VGS = 2.5 V Fast switching speed. High power and current handling capabitlity in a widely used surface mount package.
Applications
DC/DC converter Load switch Motor driving
D
D
D
D
S D
SOT-223
S
G D S
G
SOT-223*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25C unless otherwise noted
Parameter
FDT439N
30
(Note 1a)
Units
V V A W
8 6.3 20 3 1.3 1.1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
C/W C/W
Package Marking and Ordering Information
Device Marking
FDT439N
Device
FDT439N
Reel Size
13''
Tape Width
12mm
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDT439N, Rev. C
FDT439N
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
Min
30
Typ
Max Units
V
Off Characteristics
40 1 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 6.3 A VGS = 4.5 V, ID = 6.3 A, TJ=125C VGS = 2.5 V, ID = 5.5A VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 6.3 A
0.4
0.67 -2.2 0.038 0.055 0.048
1
V mV/C
0.045 0.072 0.058
ID(on) gFS
10 17
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
500 185 43
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6
6 10 30 10
12 18 48 18 15
ns ns ns ns nC nC nC
VDS = 15 V, ID = 6.3 A, VGS = 4.5 V,
10.7 0.9 3.7
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A
(Note 2)
2.5 0.8 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 42 C/W when mounted on a 1 in2 pad of 2 oz. copper.
b) 95 C/W when mounted on a 0.066 in2 pad of 2 oz. copper.
c) 110 C/W when mounted on a minimum mounting pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDT439N, Rev. C
FDT439N
Typical Characteristics
20 ID, DRAIN-SOURCE CURRENT (A) 3.0V 2.5V 2.0V 12
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2
VGS = 4.5V 16
1.8 1.6 VGS = 2.0V 1.4 2.5V 1.2 1 0.8 3.0V 3.5V 4.5V
8 1.5V
4
0 0 1 2 3 4
0
4
8
12
16
20
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.14 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100
o
ID = 6.3A VGS = 4.5V
ID = 3.2A 0.12 0.1 0.08 0.06 0.04 TA = 25 C 0.02 0
o
TA = 125 C
o
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
20 VDS = 5V ID, DRAIN CURRENT (A) 16 TA = -55 C
o
Figure 4. On-Resistance Variation with Gate-To-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125 C 25 C -55 C
o o o
25 C 125 C
o
o
12
8
4
0 0 0.5 1 1.5 2 2.5 3
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDT439N, Rev. C
FDT439N
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.3A 4
(continued)
1500
VDS = 5V 15V 10V
f = 1MHz VGS = 0 V 1200 CAPACITANCE (pF)
3
900
2
600 CISS 300 COSS CRSS 0 5 10 15 20 25 30
1
0 0 2 4 6 8 10 12
0
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
200 SINGLE PULSE
ID, DRAIN CURRENT (A)
RDS(ON) LIMIT 10
100s 1ms
POWER (W)
160
RJA = 110 C/W TA = 25 C
o
o
10ms 1 VGS = 4.5V SINGLE PULSE RJA = 110 C/W TA = 25 C 0.01 0.1 1 10 100
o o
1s 10s DC
100ms
120
80
0.1
40
0 0.0001 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1
Single Pulse D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk) r(t), NORMALIZED EFFECTIVE
R JA (t) = r(t) * R JA R JA = 110C/W
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t1 / t 2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design.
FDT439N, Rev. C
SOT-223 Tape and Reel Data and Package Dimensions
SOT-223 Packaging Configuration: Figure 1.0
Customized Label
Packaging Description:
SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
F63TNR Label Antistatic Cover Tape
Static Dissipative Embossed Carrier Tape
F852 014
SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 343x64x343 5,000 0.1246 0.7250 D84Z TNR 500 7" Dia 184x187x47 1,000 0.1246 0.1532
F852 014
F852 014
F852 014
SOT-223 Unit Orientation
343mm x 342mm x 64mm Intermediate box for Standard
F63TNR Label
F63TNR Label 184mm x 184mm x 47mm Pizza Box for D84Z Option
F63TNR Label sample
LOT: CBVK741B019 FSID: PN2222A QTY: 3000 SPEC:
SOT-223 Tape Leader and Trailer Configuration: Figure 2.0
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
Carrier Tape Cover Tape
Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets
September 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SOT-223 (12mm)
A0
6.83 +/-0.10
B0
7.42 +/-0.10
W
12.0 +/-0.3
D0
1.55 +/-0.05
D1
1.50 +/-0.10
E1
1.75 +/-0.10
E2
10.25 min
F
5.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
1.88 +/-0.10
T
0.292 +/0.0130
Wc
9.5 +/-0.025
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOT-223 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
12mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
5.906 150 7.00 178
Dim W1
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0
Dim W2
0.724 18.4 0.724 18.4
Dim W3 (LSL-USL)
0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4
12mm
13" Dia
July 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 (FS PKG Code 47)
1:1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
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First Production
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. D

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